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دیود شاتکی با مشخصات زیر:
Repetitive peak reverse voltage VRRM 30 V
Forward continuous current (1) IF 200 mA
Repetitive peak forward current (1) IFRM 300 mA
Surge forward current (1) tp < 1 s IFSM 600 mA
Power dissipation Ptot 230 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air Device on fiberglass substrate,
see layout on next page RthJA 430 K/W
Junction temperature Tj 125 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Top -55 to +125 °C
Reserve breakdown voltage IR = 100 μA (pulsed) V(BR) 30 V
Leakage current Pulsed test tp < 300 μs, δ <2 % at VR = 25 V IR 2 μA
Forward voltage
IF = 0.1 mA, tp < 300 μs, δ < 2 % VF 240 mV
IF = 1 mA, tp < 300 μs, δ < 2 % VF 320 mV
IF = 10 mA, tp < 300 μs, δ < 2 % VF 400 mV
IF = 30 mA, tp < 300 μs, δ < 2 % VF 500 mV
IF = 100 mA, tp < 300 μs, δ < 2 % VF 800 mV
Diode capacitance VR = 1 V, f = 1 MHz CD 10 pF
Reserve recovery time IF = 10 mA to IR = 10 mA,
iR = 1 mA, RL = 100 Ω trr 5 ns
